MT40A512M16TD-062E AUT:R vs K4A4G165WG-BCWE 对比
详细并排对比 MT40A512M16TD-062E AUT:R 出自 Micron Technology 和 K4A4G165WG-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A512M16TD-062E AUT:R - 8Gbit DDR4 SDRAM | Micron
MT40A512M16TD-062E AUT:R ✓ 量产中
规格对比
| 参数 | MT40A512M16TD-062E AUT:R | K4A4G165WG-BCWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.90 | $16.90 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| 存储容量 | 8 Gbit | 4 Gbit |
| 存储组织 | 512M x 16 | — |
| 接口 | Parallel | Parallel |
| Clock Frequency / Data Rate | 1.6 GHz | — |
| Access Time | 19 ns | 19 ns |
| 电源电压 | 1.2 V | 1.2 V |
| 封装 | 96-FBGA (7.5 x 13 mm) | FBGA-96 |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 (AUT grade) | — |
| Packaging Suffix | -R (Tape & Reel) | — |
| Speed Grade | -062E | — |
| Technology Family | DDR4 SDRAM (SDR/DDR family) | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval spec] | [DATA_NEEDED: refresh interval] |
| Memory Organization | — | 256M x 16 |
| 数据速率 | — | 3200 Mbps |
| 工作温度 | — | 0C to +85C |
| Memory Format | — | DRAM |
| Technology | — | DDR4 |
| Product Status | — | Active |
| RoHS 状态 | — | Compliant (per JLCPCB listing) |
| Clock Frequency | — | [DATA_NEEDED: clock frequency / tCK range] |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency] |